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Center For Interdisciplinary Research Tohoku University | 論文
- Real-Time Observation of Initial Thermal Oxidation on Si(110)-16×2 Surfaces by O1s Photoemission Spectroscopy Using Synchrotron Radiation
- 14p-W-11 CdIn_Cr_S_4 の熱伝導 II
- 5a-M-10 CdIn_2S_4の電気的性質(II)
- カルコパイライト型化合物CuInSe2薄膜の合成とその高効率薄膜太陽電池開発の現状 (特集 21世紀に開花するニューマテリアルとそのテクノロジーへの招待--東京理科大学における先端材料研究)
- 5a-D-6 CuInSe_2のラマン散乱
- 2a-A-13 化合物半導体CdInGaS_4の光吸収温度変化と圧力変化
- 27p-B-4 CdIn_2S_4-In_2S_3系の光物性-I
- 30a-N-6 CdIn_zS_4の磁気抵抗効果(II)
- 無麻酔無拘束ラットにおけるN-メチル-D-アスパラギン酸注射後の海馬1酸化窒素(NO)のNOセンサによる直接的持続モニタリング〔英文〕 (バイオエレクトロケミストリ-の新展開)
- Increase of central nitric oxide during pentylenetetrazol-induced seizures in rats
- Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
- The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
- The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)
- The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)
- Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
- The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
- The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
- Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
- The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)