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Advanced Technology Research Laboratories, Surnitomo Metal Industries, Ltd. | 論文
- Threading Dislocation Reduction in GaAs on Si with a Single InGaAs Intermediate Layer
- Dynamical Formation Process of Pure Edge Misfit Dislocations at GaAs/Si Interfaces in Post-Annealing
- Behavior of Misfit Dislocations in GaAs Epilayers Grown on Si at Low Temperature by Molecular Beam Epitaxy
- Slip Length in Silicon Wafers Caused by Indentation during Heat Treatment
- Pinning Effect on Punched-Out Dislocations in Silicon Wafers Investigated Using Indentation Method
- Effect of Oxide Precipitate Size on Slip Generation in Large Diameter Epitaxial Wafers
- Effect of Oxide Precipitate Sizes on the Mechanical Strength of Czochralski Silicon Wafers
- Epitaxial Growth of Zn and Zn-Ni Electrodeposits on Steel Sheets.