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Advanced Technology Research Laboratories, Matsushita Electric Ind.Co., Ltd. | 論文
- Complex Flow and Gas-Phase Reactions in a Horizontal Reactor for GaN Metalorganic Vapor Phase Epitaxy
- Room Temperature 339 nm Emission from Al_Ga_N/Al_Ga_N Double Heterostructure Light-Emitting Diode on Sapphire Substrate
- Bound-Exciton and Edge-Emission Spectra Associated with Li and Na Acceptors in ZnSe
- Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate
- MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate
- Improvement of Crystalline Quality in GaN Films by Air-Bridged Lateral Epitaxial Growth
- Transport of Gas-Phase Species Stored in Stagnant Volumes under a GaN Metalorganic Vapor Phase Epitaxy Horizontal Reactor : Semiconductors