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Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co | 論文
- Optimization of Ring Type Electrode Process for High Density PRAM
- Endurance Characterization of Ferroelectric Cell in 64Mb FRAM Device By Analyzing the Space Charge Concentration
- Highly Reliable Ring Type Contact Scheme for High Density PRAM
- Robust 2-D Stack Capacitor Technologies for 64Mb 1T1C FRAM
- GST Confined Structure and Integration of 64Mb PRAM
- Robust 3-Metallization BEOL Process for 0.18μm Embedded FRAM
- Cost-Effective and Highly Reliable 6F2 Multi-Gigabit DRAM in 60nm Technology Node for Low Power and High Performance Applications
- Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S^3 (Stacked Single-crystal Si) Cell Technology