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Advanced Optoelectronic Technology Center Institute Of Microelectronics Department Of Electrical Eng | 論文
- An Inverse S-Shaped Slotted Ground Structure Applied to Miniature Wide Stopband Lowpass Filters(Microwaves, Millimeter-Waves)
- A Compact Semi-Lumped Coplanar Waveguide Low-Pass Filter Fabricated on High Resistivity Silicon Substrate(Microwaves, Millimeter-Waves)
- Design of Compact and Sharp-Rejection Ultra Wideband Bandpass Filters Using Interdigital Stepped-Impedance Resonators(Microwaves, Millimeter-Waves)
- Improved Stopband of the Dual-Mode Ring Bandpass Filter Using Periodic Complementary Spilt-Ring Resonators(Microwaves, Millimeter-Waves)
- Spurious Suppression of a Parallel Coupled Microstrip Bandpass Filter with Simple Ring EBG Cells on the Middle Layer(Microwaves, Millimeter-Waves)
- Low Insertion-Loss, and Wideband Dual-Mode Bandpass Filters with Dual Perturbation Elements
- Design of Dual-Band Bandpass Filter with Quasi-Elliptic Function Response for WLANs(Microwaves, Millimeter-Waves)
- Low Temperature Metal Induced Crystallization of Amorphous Silicon by Nano-Gold-Particles
- MOVPE Growth of M-Plane GaN Using LiAlO_2 Substrates
- Improved Device Characteristics of InGaAsN Photodetectors Using MIMS Structure
- Triple Luminescence Peaks Observed in the InGaAsN/GaAs Single Quantum Well Grown by MOVPE
- Practical Passive Filter Synthesis Using Genetic Programming(CAD, Analog Circuit and Device Technologies)
- Black film for improving the contrast ratio of organic light emitting diodes
- Improvement of Light Intensity for Nitride-Based Multi-Quantum Well Light Emitting Diodes by Stepwise-Stage Electron Emitting Layer
- White Light Generation from 2,3-Dibutoxy-1,4-poly(phenylene vinylene)-CdSe/ZnS Quantum Dot–InGaN/GaN Quantum Well Dual Hybrid Light-Emitting Diodes
- InGaAsN Metal–Semiconductor–Metal Photodetectors with Transparent Indium Tin Oxide Schottky Contacts
- Triple Luminescence Peaks Observed in the InGaAsN/GaAs Single Quantum Well Grown by Metalorganic Vapor Phase Epitaxy
- Metalorganic Vapor Phase Epitaxy Growth of $m$-Plane GaN Using LiAlO2 Substrates
- Improvement in Linearity of Novel InGaAsN-Based High Electron Mobility Transistors
- Poly(methyl methacrylate) Dielectric Material Applied in Organic Thin Film Transistors
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