Amari Koichi | Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
スポンサーリンク
概要
- Amari Koichiの詳細を見る
- 同名の論文著者
- Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japanの論文著者
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan | 論文
- Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy
- Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
- Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities (Special Issue : Solid State Devices and Materials (2))
- Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals
- Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation