TANAKA Isao | Center for Crystal Science and Technology, University of Yamanashi
スポンサーリンク
概要
Center for Crystal Science and Technology, University of Yamanashi | 論文
- Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates
- Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
- Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
- New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication
- Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation