Hayakawa Jun | Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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- 同名の論文著者
- Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japanの論文著者
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan | 論文
- CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio
- Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Formation of Porous Titanium Film and Its Application to Counter Electrode for Dye-Sensitized Solar Cell
- Effect of Porous Counter Electrode with Highly Conductive Layer on Dye-Sensitized Solar Cells
- The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal–Oxide–Semiconductor Circuits