Chung U-In | Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
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- Process Development Team, Memory Division, Samsung Electronics Co., Ltd.の論文著者
Process Development Team, Memory Division, Samsung Electronics Co., Ltd. | 論文
- Ge Implantation to Improve Crystallinity and Productivity for Solid Phase Epitaxy Prepared by Atomic Mass Unit Cross Contamination-Free Technique
- Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process
- Evaluation of PECVD a-SiC:H as a Cu Diffusion Barrier Layer of Cu Dual Damascene Process
- Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
- Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications