Takahashi Eiji | NISSIN Electric Co., Ltd., Kyoto 615-8686, Japan
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概要
NISSIN Electric Co., Ltd., Kyoto 615-8686, Japan | 論文
- Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250°C
- Activation of Implanted Phosphorus Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
- Activation of Implanted Boron Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
- Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H2O Vapor Heat Treatment
- Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing