Kim Chang | Korea Advanced Nano Fab Center, Suwon 443-770, Korea
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概要
Korea Advanced Nano Fab Center, Suwon 443-770, Korea | 論文
- Carrier Dynamics of Deep-Level States in InGaN/GaN Multiquantum Wells
- Properties of Si-Doped $a$-Plane GaN Grown with Different SiH4 Flow Rates
- Mg Doping Effect in Nonpolar a-Plane GaN
- Optical Properties of Undoped a-Plane GaN Grown with Different Initial Growth Pressures
- A Comparative Study on the Optical and Electrical Properties of Si-Doped Polar and Nonpolar GaN