Sato Motoyuki | Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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- Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japanの論文著者
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan | 論文
- Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
- Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
- High-Etching-Selectivity Barrier SiC ($k
- Effect of Pattern Layout and Dissolved Oxygen in CO2 Rinse Water on Cu Corrosion during Post-Etch Cleaning
- Trench Sidewall Elimination Effect on Line-to-Line Leakage Current in Scalable Porous Silica ($k= 2.1$)/Cu Interconnect Structure