Oishi Toshiyuki | Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan

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概要

関連著者

NAKAYAMA Masatoshi
Information Technology R & D Center, Mitsubishi Electric Corporation
Oishi Toshiyuki
Information Technology R&d Center Mitsubishi Electric Corporation
Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
Yamanaka Koji
Information Technology R&d Center
Hayashi Kazuo
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan
Miyamoto Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
Yamaguchi Yutaro
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan
Otsuka Hiroshi
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan
Hayashi Kazuo
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan
Otsuka Hiroshi
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan
Oishi Toshiyuki
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan

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著作論文

Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation

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