Hayashi Kazuo | Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan
スポンサーリンク
概要
- 同名の論文著者
- Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japanの論文著者
関連著者
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Oishi Toshiyuki
Information Technology R&d Center Mitsubishi Electric Corporation
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Hayashi Kazuo
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan
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Hayashi Kazuo
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan
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Sasaki Hajime
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
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NAKAYAMA Masatoshi
Information Technology R & D Center, Mitsubishi Electric Corporation
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Yamanaka Koji
Information Technology R&d Center
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Sasaki Hajime
High Frequency & Optical Device Works, Mitsubishi Electric Corporation, Itami, Hyogo 664-8641, Japan
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Miyamoto Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Yamaguchi Yutaro
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan
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Otsuka Hiroshi
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan
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Otsuka Hiroshi
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan
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Oishi Toshiyuki
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan
著作論文
- Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation
- Analysis of On-State Gate Current of AlGaN/GaN High-Electron-Mobility Transistor under Electrical and Thermal Stresses