Yang Hyundoek | Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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- Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Koreaの論文著者
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea | 論文
- Effect of High-Pressure Oxygen Annealing on Electrical Characteristics of Metal–Alumina–Nitride–Oxide–Silicon-Type Flash Memory Devices
- Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition
- Improvement of Hafnium Oxide/Silicon Oxide Gate Dielectric Stack Quality by High Pressure D2O Post Deposition Annealing
- Characterization of Resistive Switching States in W/Pr0.7Ca0.3MnO3 for a Submicron (\phi 250 nm) Via-Hole Structure
- Improved Resistive Switching Properties of Solution-Processed TiOx Film by Incorporating Atomic Layer Deposited TiO2 layer