Matsuda Akifumi | Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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- Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japanの論文著者
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan | 論文
- Ferroelectric Properties of Dysprosium-Substituted Lead Zirconate Titanate Thin Films Fabricated by Chemical Solution Deposition
- Crystal Orientation Control of Bismuth Layer-Structured Dielectric Films Using Interface Layers of Perovskite-Type Oxides
- Site Occupancy Analysis on the Enhancement in Dy-Substituted Pb(Zr,Ti)O3 Film
- Electrical Properties of (Ca,Sr)Bi4Ti4O15 Thin Films Fabricated Using a Chemical Solution Deposition Method
- Room-Temperature Epitaxial Growth of (Li,Ni)O Thin Film with Li Content up to 60 mol %