NIIYAMA Hiromi | ULSI Research Laboratories, Toshiba Corporation
スポンサーリンク
概要
ULSI Research Laboratories, Toshiba Corporation | 論文
- Two Correlated Mechanisms in Thin SiO_2 Breakdown
- Reliability of Structurally Modified Ultra-Thin Gate Oxides
- An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration
- Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure
- Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure