MATSUOKA Ryosuke | NGK Insulators, Ltd.
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NGK Insulators, Ltd. | 論文
- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
- Advanced Structural Ceramics : From Research to Applications(Guest Editors Dedicated to Prof. Gunter Petzow: Modern Trends in Advanced Ceramics)
- 932 多孔質セラミックスの水中投下熱衝撃試験