Kim Wandong | Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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- Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Koreaの論文著者
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea | 論文
- Fin and Recess-Channel Metal Oxide Semiconductor Field Effect Transistor for Sub-50 nm Dynamic Random Access Memory Cell
- Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure
- Dual Gate Single-Electron Transistors with a Recessed Channel and Underlapped Source/Drain Structure
- Dynamic driving current using side gate bias of single-electron transistors
- Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region