Yamaguchi Atsushi | Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
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概要
- Yamaguchi Atsushi A.の詳細を見る
- 同名の論文著者
- Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japanの論文著者
関連著者
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Yamaguchi Atsushi
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
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Mizuno Jun
Institute for Nanoscience and Nanotechnology, Waseda University, Shinjuku, Tokyo 162-0041, Japan
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Usui Akira
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
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Sunakawa Haruo
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
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Kobayashi Masahide
Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan
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Goto Hiroshi
Nano Processing System Division, Toshiba Machine Co., Ltd., Numazu, Shizuoka 410-8510, Japan
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Shinohara Hidetoshi
Nano Processing System Division, Toshiba Machine Co., Ltd., Numazu, Shizuoka 410-8510, Japan
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Sasaoka Chiaki
Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan
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Koi Tomoaki
Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan
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Miyasaka Fumito
Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan
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Murase Yasuhiro
Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan
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Ando Yuji
Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan
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Yamaguchi Atsushi
Optoelectronic Device System R&D Centre, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
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Goto Hiroki
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
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Matsueda Toshiharu
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
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Fujiyama Yasuharu
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
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Ishihara Yujiro
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
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Okada Akiko
Institute for Nanoscience and Nanotechnology, Waseda University, Shinjuku, Tokyo 162-0041, Japan
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Shoji Shuichi
Institute for Nanoscience and Nanotechnology, Waseda University, Shinjuku, Tokyo 162-0041, Japan
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Nishihara Hiromi
Nano Processing System Division, Toshiba Machine Co., Ltd., Numazu, Shizuoka 410-8510, Japan
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Mizuno Jun
Institute for Nanoscience and Nanotechnology, Waseda University
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Usui Akira
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
著作論文
- GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy through Nanometer-Size Channels Fabricated with Nanoimprint Lithography
- Surface Morphologies and Optical Properties of Si Doped InGaN Multi-Quantum-Well Grown on Vicinal Bulk GaN(0001) Substrates