Sunakawa Haruo | Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
スポンサーリンク
概要
- Sunakawa Haruoの詳細を見る
- 同名の論文著者
- Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japanの論文著者
関連著者
-
Usui Akira
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
-
Sunakawa Haruo
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
-
Usui Akira
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
-
Yamaguchi A
Research Lab for Integrated Technological Systems, Kanazawa Institute of Technology, 21-3-4 Atago, Minato, Tokyo 105-0002, Japan
-
Yamaguchi A.
Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology, Tokyo 105-0002, Japan
-
Mizuno Jun
Institute for Nanoscience and Nanotechnology, Waseda University, Shinjuku, Tokyo 162-0041, Japan
-
Sunakawa Haruo
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
-
Geng Huiyuan
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
-
Sumi Norihiko
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
-
Yamamoto Kazutomi
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
-
Usui Akira
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
-
Sumi Norihiko
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
-
Yamamoto Kazutomi
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
-
Geng Huiyuan
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
-
Goto Hiroshi
Nano Processing System Division, Toshiba Machine Co., Ltd., Numazu, Shizuoka 410-8510, Japan
-
Shinohara Hidetoshi
Nano Processing System Division, Toshiba Machine Co., Ltd., Numazu, Shizuoka 410-8510, Japan
-
Yamaguchi Atsushi
Optoelectronic Device System R&D Centre, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
-
Goto Hiroki
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
-
Matsueda Toshiharu
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
-
Fujiyama Yasuharu
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
-
Ishihara Yujiro
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
-
Okada Akiko
Institute for Nanoscience and Nanotechnology, Waseda University, Shinjuku, Tokyo 162-0041, Japan
-
Shoji Shuichi
Institute for Nanoscience and Nanotechnology, Waseda University, Shinjuku, Tokyo 162-0041, Japan
-
Nishihara Hiromi
Nano Processing System Division, Toshiba Machine Co., Ltd., Numazu, Shizuoka 410-8510, Japan
-
Yamaguchi Atsushi
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
-
Mizuno Jun
Institute for Nanoscience and Nanotechnology, Waseda University
著作論文
- Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy
- GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy through Nanometer-Size Channels Fabricated with Nanoimprint Lithography