Yamaguchi A. | Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology, Tokyo 105-0002, Japan
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概要
- Yamaguchi A. Atsushiの詳細を見る
- 同名の論文著者
- Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology, Tokyo 105-0002, Japanの論文著者
関連著者
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Yamaguchi A.
Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology, Tokyo 105-0002, Japan
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Yamaguchi A
Research Lab for Integrated Technological Systems, Kanazawa Institute of Technology, 21-3-4 Atago, Minato, Tokyo 105-0002, Japan
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Sunakawa Haruo
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
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Geng Huiyuan
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
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Sumi Norihiko
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
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Yamamoto Kazutomi
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
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Usui Akira
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
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Sumi Norihiko
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
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Yamamoto Kazutomi
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
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Usui Akira
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
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Geng Huiyuan
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
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Sunakawa Haruo
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
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Usui Akira
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Tochigi 323-8601, Japan
著作論文
- Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy
- Anisotropic Optical Matrix Elements in Strained GaN Quantum Wells on Semipolar and Nonpolar Substrates