Anisotropic Optical Matrix Elements in Strained GaN Quantum Wells on Semipolar and Nonpolar Substrates

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概要

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• In-plane optical anisotropies in compressively strained III–nitride quantum wells on semipolar and nonpolar substrates are numerically calculated using the $6\times 6\ \mathbf{k}\cdot\mathbf{ p}$ Hamiltonian. It is shown that quantum confinement and compressive strain have the opposite effects on the anisotropies, and that the in-plane polarization degree is determined by the competition of these two effects. These characteristics are also verified by analytical calculation, and it is found that the signs of ($A_{4}-A_{5}$) and ($D_{4}-D_{5}$) are essential factors in determining the above-mentioned polarization properties, where $A_{4}$ and $A_{5}$ are valence band parameters and $D_{4}$ and $D_{5}$ are deformation potentials. On the basis of the calculation results, the structural design of laser diodes on semipolar and nonpolar substrates is also discussed.

• Japan Society of Applied Physicsの論文
• 2007-09-25

著者

• Yamaguchi A.

  Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology, Tokyo 105-0002, Japan

関連論文

• Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy
• Anisotropic Optical Matrix Elements in Strained GaN Quantum Wells on Semipolar and Nonpolar Substrates

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