Murase Yasuhiro | Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan
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概要
- 同名の論文著者
- Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japanの論文著者
関連著者
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Kobayashi Masahide
Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan
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Sasaoka Chiaki
Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan
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Koi Tomoaki
Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan
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Miyasaka Fumito
Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan
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Murase Yasuhiro
Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan
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Ando Yuji
Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan
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Yamaguchi Atsushi
Optoelectronic Device System R&D Centre, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
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Yamaguchi Atsushi
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
著作論文
- Surface Morphologies and Optical Properties of Si Doped InGaN Multi-Quantum-Well Grown on Vicinal Bulk GaN(0001) Substrates
- Surface Morphologies and Optical Properties of Si Doped InGaN Multi-Quantum-Well Grown on Vicinal Bulk GaN(0001) Substrates