Surface Morphologies and Optical Properties of Si Doped InGaN Multi-Quantum-Well Grown on Vicinal Bulk GaN(0001) Substrates

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概要

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• Morphological and optical properties of Si doped In<inf>0.07</inf>Ga<inf>0.93</inf>N multi-quantum-well (MQW) were studied on a vicinal bulk GaN(0001) substrate with low dislocation density. Surface morphology of InGaN MQW was sensitive to the misorientation direction due to the anisotropic step edge structure peculiar to a hexagonal crystal. Appropriate Si doping was useful to suppress instability of the step front and a well-aligned straight step structure was demonstrated for the misorientation direction of [1\bar{1}00] with Si doping of 5\times 10^{18} cm^-3. Low temperature photoluminescence (PL) indicated that good luminescence properties were maintained under the wide range of doping concentration, while PL degradation was observed for heavily doped MQW's. The luminescence properties were discussed based on a self-consistent calculation of the electronic structure of Si-doped MQW's.

• 2013-11-25

著者

• Kobayashi Masahide

  Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan

• Sasaoka Chiaki

  Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan

• Koi Tomoaki

  Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan

• Miyasaka Fumito

  Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan

• Murase Yasuhiro

  Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan

• Ando Yuji

  Compound Semiconductor Devices Business Division, Renesas Electronics Corporation, Otsu 520-0833, Japan

• Yamaguchi Atsushi

  Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan

関連論文

• GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy through Nanometer-Size Channels Fabricated with Nanoimprint Lithography
• Surface Morphologies and Optical Properties of Si Doped InGaN Multi-Quantum-Well Grown on Vicinal Bulk GaN(0001) Substrates
• Surface Morphologies and Optical Properties of Si Doped InGaN Multi-Quantum-Well Grown on Vicinal Bulk GaN(0001) Substrates

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