Liu Yongxun | Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japanの論文著者
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan | 論文
- Fabrication and Current–Voltage Characteristics of Fe3Si/CaF2/Fe3Si Magnetic Tunnel Junction
- Epitaxial Growth and Magnetic Properties of Fe3Si/CaF2/Fe3Si Tunnel Junction Structures on CaF2/Si(111)
- Absorption Spectra of Smoke Emitted from Heated Nylon Fabric Measured with a Continuous-Wave Sub-Terahertz Spectrometer
- Atomic Layer Deposition of SiO₂ for the Performance Enhancement of Fin Field Effect Transistors
- Atomic Layer Deposition of SiO