SIGMUND Jochen | Institut fur Hochfrequenztechnik, Fachbereich Elektrotechnik und Informationstechnik, TU Darmstadt
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- Institut fur Hochfrequenztechnik, Fachbereich Elektrotechnik und Informationstechnik, TU Darmstadtの論文著者
Institut fur Hochfrequenztechnik, Fachbereich Elektrotechnik und Informationstechnik, TU Darmstadt | 論文
- Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements
- Fabrication and Characterisation of Direct Schottky Contacts to Two-Dimensional Electron Gas in GaAs/AlGaAs Quantum Wells
- Boron Implantation into GaAs/Ga_In_P Heterostructures
- Process-Induced Defects in InP Caused by Chemical Vapor Deposition of Surface Passivation Dielectrics
- Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process