Oshima Masaharu | Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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- Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japanの論文著者
Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan | 論文
- Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment
- Crystal Lattice Changes Induced by Magnetic Field and Helifan Structure in Holmium Metal
- X-Ray Diffraction Study on Thermal Properties of Crystal Lattices in CeP and CeAs
- Effect of Magnetic Transitions and Charge-Ordering on Crystal Lattice in Nd_Sr_MnO_3
- Magnetic Structures of GdCu_Zn_x System