GENTILE Massimo | Istituto di Elettronica dello Stato Solido, CNR

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Istituto di Elettronica dello Stato Solido, CNR | 論文

• Numerical Analysis of the Electrical Characteristics of Gate Overlapped Lightly Doped Drain Polysilicon Thin Film Transistors
• A Two-Pass Excimer Laser Annealing Process to Control Amorphous Silicon Crystallization
• Pd-Gate a-Si:H Thin-Film Transistors as Hydrogen Sensors
• Source-Drain Metal Contact Effects in Short-Channel a-Si:H Thin-Film Transistors
• Theoretical Analysis of a-Si:H Based Multilayer Structure Thin Film Transistors

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