Li Huiqiu | Satellite Venture Business Laboratory, The University of Tokushima
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概要
Satellite Venture Business Laboratory, The University of Tokushima | 論文
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(Heterostructure Microelectronics with TWHM2003)
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
- Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer