鈴木 恭一 | NTT Basic Research Laboratories, NTT Corporation
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概要
NTT Basic Research Laboratories, NTT Corporation | 論文
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN