NAKAZAWA Kenji | Department of Electronics, Faculty of Technology, Kanazawa University
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概要
Department of Electronics, Faculty of Technology, Kanazawa University | 論文
- Properties of "Stoichiometric" Silicon Oxynitride Films
- Structural Properties of Ultrathin Amorphous Silicon Oxynitride Layers
- Effects of Plasma-Pretreatment on Substrates before Deposition of Polycrystalline Silicon Films(Surfaces, Interfaces, and Films)
- Influence of Organic Contamination on Silicon Dioxide Integrity
- Effects of Addition of SiF_4 During Growth of Nanocrystalline Silicon Films Deposited at 100℃ by Plasma-Enhanced Chemical Vapor Deposition