HAZAMA Hiroaki | Microelectronics Engineering Laboratory, Toshiba Corp.
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概要
Microelectronics Engineering Laboratory, Toshiba Corp. | 論文
- Single Crystalline Silicon Floating Gate Technology for Sub-10nm Interelectrode Dielectrics
- New PentaCoordinated Si(PCS) Model for SiN CVD Mechanism
- Precipitation of Boron in Highly Boron-Doped Silicon
- Oxide-Mediated Solid Phase Epitaxy(OMSPE)of Silicon : A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
- Diffusion and Segregation of Carbon in SiO_2 Films