GOTO Toshio | Department of Electronics, School of Engineering, Nagoya University
スポンサーリンク
概要
Department of Electronics, School of Engineering, Nagoya University | 論文
- Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
- Increase of Current Density of the Electron Probe by Correction of the Spherical Aberration with a Side-Entry Type Foil Lens
- Characteristics and effectiveness of a foil lens for correction of spherical aberration in scanning transmission electron microscopy
- Correction of the Spherical Aberration of the Objective Lens in a Conventional Transmission Electron Microscope by Means of a Foil Lens