Yamaguchi Masahito | Department of Electronics and Akaaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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- 同名の論文著者
- Department of Electronics and Akaaki Research Center, Nagoya University, Nagoya 464-8603, Japanの論文著者
Department of Electronics and Akaaki Research Center, Nagoya University, Nagoya 464-8603, Japan | 論文
- Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
- Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
- Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
- Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer