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Department of Electronics and Akaaki Research Center, Nagoya University, Nagoya 464-8603, Japan | 論文

• Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
• Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
• Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
• Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer

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