Hofbauer Wulf | Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
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Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 | 論文
- Concept of Strain-Transfer-Layer and Integration with Graded Silicon–Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement
- Strain Relaxed High Quality Silicon–Germanium-on-Insulator Substrates Formed by Pulsed Laser Irradiation Technology
- Low Temperature Metal-Induced Lateral Crystallization of Si1-xGex Using Silicide/Germanide-Forming-Metals
- Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation
- Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate