Cho Nam | LG Semicon.,Ltd.
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概要
LG Semicon.,Ltd. | 論文
- Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
- Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
- Dependence of Sub-Threshold Hump and RNWE Characteristics on the Gate Length by TED
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length