Honda Takahiko | Toyota Technological Institute, Nagoya 468-8511, Japan
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概要
Toyota Technological Institute, Nagoya 468-8511, Japan | 論文
- Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
- Numerical Analysis for Radiation Resistant InGaP Solar Cell
- Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence
- Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Erratum: ``Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films''