YOSHIKAWA Kenji | Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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概要
- 同名の論文著者
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie Universityの論文著者
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University | 論文
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Variation of Surface Potentials of Si-Doped Al_xGa_N (O
- Selective Area Growth of III-Nitride and Their Application for Emitting Devices
- Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors