SHIGYO Naoyuki | ULSI Device Engineering Laboratory, Toshiba Corporation
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概要
ULSI Device Engineering Laboratory, Toshiba Corporation | 論文
- Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope
- Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope
- Design Methodology of Deep Submicron CMOS Devices for 1 V Operation (Special Issue on Low-Power LSI Technologies)
- Low-Voltage and Power CMOS Technology