Akio Kaneta | Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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- Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japanの論文著者
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan | 論文
- Strain-Induced Effects on the Electronic Band Structures in GaN/AlGaN Quantum Wells: Impact of Breakdown of the Quasicubic Approximation in GaN
- Homoepitaxy and Photoluminescence Properties of (0001) AlN
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
- Homoepitaxy and Photoluminescence Properties of (0001) AlN
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC (0001)