Shibata Hiromi | Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan
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Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan | 論文
- Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal--Oxide--Semiconductor Field-Effect Transistor
- Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy
- Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching
- Interface Resistivity of Directly Bonded Si Wafers
- Operator Algebra of Foliations with Projectively Invariant Transverse Measure