Interface Resistivity of Directly Bonded Si Wafers
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概要
- 論文の詳細を見る
To study the interface resistivity of bonded Si wafers, every combination of three kinds of Si wafers ($1.86\times 10^{-2}$, $1.91\times 10^{-1}$, and 2.44 $\Omega$ cm in resistivity) was bonded by surface activation bonding. Thermal treatments up to 1100 °C were performed and the resistivities of bonded Si wafers were measured by a four-probe method. The interface resistivities were estimated with calculations based on a model of the composite resistivity of bonded Si wafers.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-10-15
著者
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Kanno Ikuo
Graduate School Of Engineering Kyoto Univ.
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NOMIYA Seiichiro
Raytech Corporation
-
Onabe Hideaki
Raytech Corp.
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Nomiya Seiichiro
Raytech Corporation, Utsunomiya 321-0904, Japan
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Yamashita Makoto
Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan
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