NISHIDA Katsuhiko | Eniwa Research and Development Center, Kyoto Semiconductor Corporation
スポンサーリンク
概要
Eniwa Research and Development Center, Kyoto Semiconductor Corporation | 論文
- A New N-Channel Junction Field-Effect Transistor Embedded in the i Layer of a Pin Diode
- Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas
- Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas
- Characterization of Deep Levels in Si-Doped In_xAl_As Layers Growrn by Molecular Beam Epitaxy