MATSUDA Yoshio | System LSI Development Center, Mitsubishi Electric Corporation
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概要
System LSI Development Center, Mitsubishi Electric Corporation | 論文
- A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
- 3.0 Gb/s, 272 mW, 8:1 Multiplexer and 4.1 Gb/s, 388 mW, 1:8 Demultiplexer
- A New Emitter-Follower Circuit for High-Speed and Low-Power ECL
- Design and Experimental Results of CMOS Low-Noise/Driver MMIC Amplifiers for Use in 2.4-GHz and 5.2-GHz Wireless Communications
- 2.4-GHz-Band CMOS RF Front-End Building Blocks at a 1.8-V Supply(Special Section on Analog Circuit Techniques and Related Topics)