Huang Bin-Feng | Department of Electronics Engineering, Chungnam National University, 220 Gung-Dong, Yuseong-gu, Daejeon 305-764, Korea
スポンサーリンク
概要
- Huang Bin-Fengの詳細を見る
- 同名の論文著者
- Department of Electronics Engineering, Chungnam National University, 220 Gung-Dong, Yuseong-gu, Daejeon 305-764, Koreaの論文著者
Department of Electronics Engineering, Chungnam National University, 220 Gung-Dong, Yuseong-gu, Daejeon 305-764, Korea | 論文
- Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide
- Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device
- Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device
- Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications
- Clinical Validity of Longitudinal Pre-Ejectional Myocardial Velocity for Identifying the Transmural Extent of Viable Myocardium : Early After Reperfusion of an Infarct-Related Coronary Artery