Kuninobu Shigeo | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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概要
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. | 論文
- Plasma Ion-Doping Technique with 20 kHz Biased Electron Cyclotron Resonance Discharge : Techniques, Instrumentations and Measurement
- Tunnel Structured Stacked Capacitor Cell (TSSC) with High Reliability for 64 Mbit dRAMs and Formation of Oxide-Nitride-Oxide Film (ONO) on 3-dimensionally (3d) Storage Electrode
- Doping of Trench Side-Walls Using an Arsenic Planar-Type Solid-Diffusion Source (S-D Source) and Analysis of Doping Uniformity by Secondary Ion Mass Spectroscoty (SIMS)
- SiO_2/Si Interfaces Studied by STM
- A Small Collector-Up AlGaAs/GaAs Heterojunction Bipolar Transistor Fabricated Using H^+ Implantation