Kageshima Hiroyuki | NTT Basic Research Laboratories, NTT Corporation

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概要

• KAGESHIMA Hiroyukiの詳細を見る
• 同名の論文著者
• NTT Basic Research Laboratories, NTT Corporationの論文著者

NTT Basic Research Laboratories, NTT Corporation | 論文

• Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
• Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN

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