Tanoue Hisao | Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japanの論文著者
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan | 論文
- Dual-Metal-Gate Transistors with Symmetrical Threshold Voltages Using Work-Function-Tuned Ta/Mo Bilayer Metal Gates
- P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
- Device Design Consideration for $V_{\text{th}}$-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
- Demonstration and Analysis of Accumulation-Mode Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
- Tip-to-Sample Distance Dependence of $dC/dZ$ Imaging in Thin Dielectric Film Measurement